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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1263N DESCRIPTION *With TO-3P(I) package *Complement to type 2SC3180N *2SA1263 with short pin APPLICATIONS *Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Fig.1 simplified outline (TO-3P(I)) and symbol Base Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -5 -6 -0.6 60 150 -55~150 UNIT V V V A A W PT Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1263N CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Cob PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA ,IB=0 IC=-5A; IB=-0.5A IC=-3A ; VCE=-5V VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-3A ; VCE=-5V IC=-1A ; VCE=-5V IE=0 ; VCB=-10V ;f=1MHz 55 35 30 290 MHz pF MIN -80 -1.0 -0.95 -2.0 -1.5 -5 -5 160 TYP. MAX UNIT V V V A A hFE-1 Classifications R 55-110 O 80-160 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1263N Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1263N 4 |
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